12N60 DATASHEET PDF

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It is mainly suitable for active power factor correction and switching mode power supplies. Licensee agrees that it has received a copy of the Content, including Software i. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto.

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It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1. The device ha 1.

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12N60 Datasheet(PDF) – Nell Semiconductor Co., Ltd

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These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

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12N60 Datasheet

The transistor can be used in various po 1. These devices are 1. Low Gate Charge Typ. Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. BOM, Gerber, user manual, schematic, test procedures, etc. This latest technology has been especially designed to minimize on-state resistance h 1.