BURIED WORDLINE PDF

Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM [1] describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.

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The buried word line may comprise a lower buried word line formed in the lower region of the gate electrode layer, and an upper buried word line formed in the upper region of the gate electrode layer.

For example, in order to secure a step coverage above Semiconductor memory devices including vertically oriented transistors and methods of manufacturing such devices. A trench forming a recess channel within the active region defined by the device isolation layer may be formed.

Transistor having dual work function bruied gate electrode, method for manufacturing the same and electronic device having the same. The foregoing is illustrative of example embodiments and is not to be construed as limiting thereof. However, this is merely illustrative and thus, the gate electrode layer and the buried word line are not limited to this recessed feature. In addition, a description of forming layers within and on the gate using deposition and etching techniques is also well known to those skilled in the art, and thus, omitted.

Winbond Adopts Qimonda’s Buried Wordline Technology – Metal Gates Come to DRAMs | Siliconica

One other point was ubried by Qimonda before they went under, that this technology is particularly suitable wprdline a cell shrink from the current 6F2 to a 4F2 format, enabling even more cost savings by reducing die size.

As such, the deposition of the metal that forms the upper buried word line may be performed more easily. An active region of a source and drain is formed in the substrate adjacent to both sides of the metal gate electrode The gate electrode layer may have a thickness within a range of about 1 to about 10 nm. However, when the width of the burief is less than about 50 nm, there may be a constraint that the thickness of the polysilicon layer be no more than about 5 nm. The gate insulating layer may be a thermal oxide layer formed by thermal oxidation.

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However, this is merely illustrative, and thus, the gate electrode layer and the buried word line are not limited to these materials. The size of the recessed region of the gate insulating layerthe gate electrode layerand the buried word line may be equal to or maybe different from each worsline. Recessed gate structures including blocking members, methods of forming the same, semiconductor devices having the recessed gate structures and methods of forming the semiconductor devices.

6F2 buried wordline DRAM cell for 40nm and beyond – Semantic Scholar

Apparatuses and methods for improving retention performance of hierarchical digit lines. Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. In example embodiments, forming the buried word line may include forming a lower buried word line in a lower region of the gate electrode layer and forming an upper buried word line in an upper region of the gate electrode layer, the upper buried word line being formed of a material different from that of the lower buried word line.

One or more recess channels may be formed, and accordingly a plurality of trenches may be formed within the active region defined by the device isolation layer The semiconductor device may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region including a trench and one or more recess channels, a gate isolation layer on the surface of the trench, a gate electrode layer on the surface of the gate isolation layer, and a word line by which the trench may be buried on the surface of the gate electrode layer.

The upper buried word line may comprise a silicide. However, this is merely illustrative and thus, the upper buried word line is not limited to these metals. In example embodiments, the buried word line may be formed of any one selected from the group consisting of tungsten Waluminum Alcupper Cumolybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof.

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6F2 buried wordline DRAM cell for 40nm and beyond

The oxide layer formed on the top surface of the substrate when forming the gate insulating layer may be removed using a conventional method e.

The buried word line may be formed by forming a word line layer on wodline substrate so as to bury the trench The degradation of the oxide layers due to the occurrence of chlorine ions from applying the TiN layer, buriee is formed using a CVD or an atomic layer worldine ALD method, is one of the causes of the problems described above. Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor. The trench may have a width within a range of about 10 to about nm.

Semiconductor devices including a field effect transistor and methods of the same.

The device isolation layer may be a shallow trench isolation STI for improving the speed and the degree of integration of the device, but is not limited thereto. The forming of the buried word line may comprise forming the lower buried word line in the lower region of the gate electrode layer, and forming the upper buried word line in the upper region of the gate electrode layer. As such, there may be less leakage current.

SUMMARY Example embodiments provide a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried inside of a substrate, thereby reducing the height of the semiconductor device and the degradation of oxide layers due to the application of a TiN metal gate.

When using the atomic layer deposition method using SiH 4 gas or Si 2 H 6 gas, it may be more difficult to buride a continuous layer having a thickness of about 5 nm. In order to form the trencha burued insulating layer e.